Packaging Innovations for High Voltage (HV) GaN Technology

Texas Instruments Inc. (TI) has recently announced the introduction of the semiconductor industry's first high voltage (600V), driver-integrated product built around Gallium Nitride (GaN) technology. Integrating the GaN FET with the driver in a single Quad Flat No-Lead (QFN) package required overcoming a number of challenges. The integrated GaN technology enables greater energy efficiency, increased power density and reduced power loss over silicon, thus enabling industrial, enterprise-computing, telecom and renewable-energy systems to operate significantly faster and more efficiently. This paper will discuss the novel packaging solutions implemented for obtaining excellent performance and manufacturability of the product: chip-package co-design, FET-package interaction, and material selection.