Ohmic Contacts to Heavily Carbon-Doped p + -GaAs Using Ti/Si/Pd

Low specific resistance ohmic contacts have been formed on heavily carbon doped GaAs using the Ti/Si/Pd system. Suicide formation was observed in the Pd/Si layers over the temperature range 400 – 700 C using RTA. Contact resistances as low as 0.061 Ω-mm and specific contact resistances as low as 3.2 × 10 −6 Ω;-cm 2 were measured. Silicide/Ti/GaAs interfacial information was determined using TEM and Auger depth profiling.