Infrared detector based on crystal ion sliced LiNbO3 single-crystal film with BCB bonding and thermal insulating layer

Abstract In this study, LiNbO 3 (LNO) thin films prepared by crystal ion slicing (CIS) technology have been used to fabricate pyroelectric infrared detectors. Crack free LNO film with single crystal structure have been prepared on a LNO holder substrate by CIS technology using He + implantation and benzocyclobutene (BCB) bonding process. The surface roughness caused by the Gauss distribution of He + has been decreased from 10.81 nm to 4.66 nm after Ar + treatment. The pyroelectric coefficient of LNO thin film is 5 × 10 −5 C/m 2 · K measured by dynamic method, which is comparable to LNO bulk crystal materials. The Rv value of infrared device fabricated by LNO single crystal film was calculated to be 1.93 × 10 3 V / W at 5 Hz chopper frequency. Compared to normally used SiO 2 bonding layer, the thermal isolation properties have been improved by BCB bonding material according to the thermal finite element analysis. The results demonstrated CIS technology using BCB bonding materials is a promising method to fabricate integrated pyroelectric devices.