Calcul de coefficients de transport en regime de porteurs chauds à partir de Maxwelliennes deplacées

This paper presents some results concerning p-type silicon at T = 77 K and T = 300 K, with or without doping concentration. Those results are obtained using series development of the carrier distribution function based on displaced Maxwellians. This algorithm may be up to 200 times faster than direct methods like Monte Carlo approach.