Recombination in the end regions of pin diodes
1979
Abstract The recombination currents in the end regions of pin diodes have been investigated by means of an IR absorption technique. The diodes had graded doping profiles in the end regions, and a wide base (374 μm). It has been found experimentally that over a wide range of currents the recombination is proportional to the square of the injected carrier density at the junctions, which justifies the use of constant h parameters to characterise the recombination. Models of Shockley-Read recombination centres in the end regions are described, which give good agreement with experimental results.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
15
References
48
Citations
NaN
KQI