Dielectric studies on a-Se 100-x Bi x (x = 0, 0.5, 2.5, 5 & 10) system

2009 
The dependence of dielectric constant (e′) and dielectric loss (e″) on temperature and frequency have been investigated for a-Se100-xBix (x = 0, 0.5, 2.5, 5 and 10) alloys. The measurements have been made in the temperature range 300 to 370 K and in the frequency range 0.12 to 100 kHz. A strong dielectric dispersion has been observed when Bi is incorporated into a-Se in the operating range of temperature and frequency. The increase in dielectric parameters (e′ and e″) with increase in Bi concentration in the Se-Bi system has been discussed in terms of the increase in the density of defect states in these alloys.
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