High Speed 4 kbit Static RAM with Silicide Coated Wiring

A high speed, fully static, and 4096 word by one bit Random Access Memory has been developed, using short channel MOSFETs with platinum silicide (PtSi) coated polysilicon gate and PtSi coated n+ diffusion layer as low resistive wiring. The present RAM was operated on a single 5±1 volt power supply. Its typical performances are 21 nsec address access time, 23 nsec chip select access time, 500 mW operating power and 50 mW stand by power.