Temperature and donor concentration dependence of the conduction electron Lande g-factor in silicon

Temperature and donor concentration dependence of the conduction electron g-factor in silicon has been investigated both experimentally and theoretically. We performed electron spin resonance experiments on Si samples doped with different densities of phosphorus and lithium. Theoretical consideration is based on the renormalization of the electron energy in a weak magnetic field by the interaction with possible perturbing agents, such as phonons and impurity centers. In the second-order perturbation theory interaction of the electron subsystem with the lattice vibrations as well as ionized donors results in decreasing the conduction electron g-factor, which becomes almost linear function both of temperature and impurity concentration.