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1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop
2020
Ajit Kanale
Tzu-Hsuan Cheng
Ki Jeong Han
B. Jayant Baliga
Subhashish Bhattacharya
Douglas C. Hopkins
Keywords:
Optoelectronics
Field-effect transistor
Composite material
Voltage drop
Materials science
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