Structural and energy bandgap modification of chemically synthesized Cd(Zn, Cu)Se thin films

Abstract In this letter, Cd1-x-yZnxCuySe (0.025 ≤ x = y ≤ 0.15) thin films were deposited by a chemical route. As-deposited thin films were characterized for the structural, morphological compositional and optoelectronic studies. X-ray diffraction confirmed the formation of polycrystalline thin films with a mixed crystal structure. Compositional analysis indicated the substitution of Cd2+ ions by Zn2+ and Cu2+. As-grown semiconductor thin films revealed p-type conductivity with a high absorption coefficient (≈105 cm-1). The energy bandgap was modified from 2.09 eV to 2.33 eV by Zn and Cu addition into the CdSe host.