Low-Frequency Noise in III–V, Ge, and 2D Transistors

Novel channel materials such as III–V, Ge, and 2D materials have long been considered as replacement channel materials for post-Si CMOS applications. Low-frequency noise characterization can be used as alternate probes to quantitatively analyze performance, variability, and reliability of such devices with novel materials and architectures. In this chapter, low-frequency noise characteristics of MOSFETs with novel channel materials are presented and analyzed. The impact of device scaling and ballistic transport on low-frequency noise is discussed.