TheImpactofBaseCurrent orVoltage Biasing OnCharacterization andModeling ofHBTs

B. Lee,L.P. Dunleavy,W. Clausen,D.P. Markell

TheImpactofBaseCurrent orVoltage Biasing OnCharacterization andModeling ofHBTs

2006

B. Lee
L.P. Dunleavy
W. Clausen
D.P. Markell

Theimpact ofbasecurrent orvoltage biasing on HBT devicecharacterization and modeling is explored experimentally foranInGaPGaAsonwafer (1. 6x30um)device. Theimportant influences ofthe measurements withbasevoltage source areidentified byshowing themodelperformances ofthedevice. TheHBTsweremodeled withseveral advance HBT models, andaCurtice Modified Gummelisusedfor theelectro-thermal modeling examples shownherein.

Keywords:

Heterojunction bipolar transistor
Biasing
Electronic engineering
Computer science
Electrical engineering

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