The use of a metalorganic compound for the growth of InP-epitaxial layers

InP epitaxial layers have been grown by the pyro-lysis of a new metalorganic compound, a trimethyl-indium trimethyl-phosphene adduct. The formation of unwanted polymer products during epitaxial growth could be avoided in this way. The layers were grown at 500°C with a growth rate of about 1 µmh-1. Net carrier concentrations of n≏5-10l5cm-3 could be achieved.