Self-aligned gate-last surface channel In 0.53 Ga 0.47 As MOSFET with selectively regrown source and drain contact layers

III-V MOSFETs are currently being considered as a candidate for future high performance transistors [1]. In particular, In1-xGaxAs compounds are investigated for application in digital logic due to their advantageous electronic properties [2]. III-V technologies may be introduced beyond the 22 nm node, which will require a self aligned III/V device architecture as well as integration of high-? gate oxides.