Growth of free-standing non-polar GaN on (100) γ-LiAlO2 substrates by hydride vapor phase epitaxy

Nonpolar free-standing m-plane GaN substrates were fabricated by hydride vapor phase epitaxy on (100) γ-LiAlO2 substrates. The surface morphlogies were characterized by conventional optical microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction. Optical properties examined by photo-luminescence spectroscopy exhibited a strong and sharp near near-band-edge emission peak at 3.43 eV, as well as a defect-related yellow emission (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)