Thick HVPE growth of ZnSe on GaAs and OP-GaAs templates for nonlinear frequency conversion (Conference Presentation)

We discuss low-pressure HVPE growth of ZnSe on GaAs substrates (~350 µm thick) and on OP-GaAs templates (~115 µm thick) that achieved single-crystalline quality ZnSe layers which will be used to develop OP-ZnSe QPM structures for nonlinear frequency conversion devices. Material characterization techniques including SEM, HR-XRD, XTEM, and PL have been used to verify that the ZnSe grown by HVPE has a superior quality to the commercially available ZnSe substrates. Current focus is to obtain thicknesses beyond 500 µm using plain and OP templates for frequency conversion in the MLWIR.