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Evaluation of III-V nitride layers grown homo-epitaxially on GaN bulks by photothermal deflection spectroscopy
Evaluation of III-V nitride layers grown homo-epitaxially on GaN bulks by photothermal deflection spectroscopy
2019
Kiyotaka Fukuda
Shuhei Yashiro
Hajime Fujikura
Taichiro Konno
Takayuki Suzuki
Tetsuji Fujimoto
Takehiro Yoshida
Takeyoshi Onuma
Tomohiro Yamaguchi
Tohru Honda
Masatomo Sumiya
Keywords:
Optoelectronics
Spectroscopy
Nitride
Materials science
Non-radiative recombination
Epitaxy
Deflection (engineering)
Photothermal therapy
Correction
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