Hot Electron Energy Relaxation Rates in a HgCdTe Superlattice

We have measured the electron energy relaxation rate in the conduction layers of a HgCdTe superlattice at temperatures between 20 - 200 mK. The purpose of this measurement is to compare the energy relaxation rates of hot electrons with those of other 2d electron systems such as GaAs/AlGaAs multiple quantum wells which we have previously reported. The sample consists of 24 periods of 240 A layers of HgxCd1-x Te with x = 0.55 alternating with x = 0.15. The resistance of this material exhibits a log (T) dependence from 10 K to below 40 mK. The energy relaxation rate is consistent with electron-phonon coupling as seen previously in both GaAs and thin films of copper.