MOMBE Growth of GaInAs/InP Structures: Quantum Wells anid Selective Epitaxy

High quality InP and GaInAs have been grown by MOMBE. 77K mobilities of 57000cm 2 /Vs for InP and 50000cm 2 /Vs for GaInAs were obtained. We have prepared GaInAs/InP multi single quantum well structure showing sharp photoluminescence peaks with linewidths as low as 7 meV for 1.7nm well. We have also studied selective epitaxy on different shapes of mesas and performed the planarization of a RIE etched ridge.