Nonequilibrium Dynamics of Carriers and Phonons in GaAs after High Excitation by Short Time Laser Pulses

Taking into account the electron–hole interaction and the nonequilibrium of optical phonons, the plasma cooling in GaAs after short time excitation by a laser pulse is investigated numerically. The energy transfer from electrons to holes is essential for times up to the order of picoseconds. Results are presented for a concentration of 1018 cm−3 carrier pairs. [Russian Text Ignored.]