Experimental study of temperature sensitivity of carrier lifetime and recombination coefficients in GaInNAs SQW lasers

This paper deals with the characterization of the differential carrier lifetime and the calculation of the monomolecular, radiative and non-radiative recombination coefficients and their temperature dependence as an evidence of the excellent temperature performance of this material system. The device characterized is a 1.25 /spl mu/m GaInNAs laser structure grown on a GaAs substrate. The active region consists of a single 6 nm thick single quantum well. Light current (L-I) characteristics performed over a temperature range of 20/spl deg/C to 80/spl deg/C, show a characteristic temperature of 50 K. Similar than in the case of commercial InGaAs. Good temperature performance of optical gain using Hakki-Paoli method, lasing wavelength and efficiency will also be presented and compared with modelling work.