Capacitor and semiconductor device comprising the same

It provides a semiconductor device comprising a capacitor and this. The capacitor includes a lower electrode, a dielectric film and an upper electrode. Capacitor, and further comprising: between the dielectric film and the upper electrode, suppressing the oxygen moved and the first material layer comprises aluminum oxide, donating oxygen to the upper electrode and the second material comprising a titanium oxynitride film, oxygen in the dielectric layer it is possible to prevent the loss.