CMOS-on-SOI ESD protection networks☆

1998 
Abstract ESD robustness of 4 kV HBM is achieved in CMOS-on-SOI ESD protection networks in an advanced sub-0.25 μm mainstream CMOS-on-SOI technology. Design layout, body contact, floating-gate effects and novel ESD protection implementations are discussed.
    • Correction
    • Cite
    • Save
    • Machine Reading By IdeaReader
    12
    References
    23
    Citations
    NaN
    KQI
    []