Dry etching damage in III–V semiconductors

Dry etching using ions can cause damage to the underlying semiconductor. This paper discusses damage in III–V semiconductors and presents examples of etching conditions under which it can be effectively eliminated. A distinction between surface and sidewall damage is made and methods of measuring both parameters are reviewed. It is noted that the noble gases cause relatively deep damage, while under the correct circumstances, etchants that have a marked chemical effect can cause much less damage. The present state of understanding of the mechanisms for the damage is discussed.