Coarsened-sidewall AlGaInP-base LED and manufacture method thereof

The invention relates to a coarsened-sidewall AlGaInP-base LED and a manufacture method thereof and belongs to the technical field of semiconductors. The method comprises steps of: bonding an epitaxial wafer on a permanent substrate by using a metallic bonding layer on the epitaxial wafer and a metallic bonding layer on the permanent substrate in order to form a bonded semi-finished product; removing a temporary substrate, a buffer layer, and a cutoff layer on the bonded semi-finished product in order to expose an ohmic contact layer; etching and patterning the ohmic contact layer, and manufacturing a n-type expansion electrode, a main electrode, and a back electrode; and etching a cutting channel at least reaching a p-GaP window layer on the periphery of the epitaxial layer of each LED chip, coarsening the surface and the sidewall of the epitaxial layer in order that the surface and the sidewall of the epitaxial layer are coarsened. The manufacture method is simple in technology, convenient in production, and capable of increasing electro-optical conversion efficiency, prolonging the service life of the LED, enlarging a visual angle, and improving the display effect of an LED screen.