Rapid‐thermal‐oxidized porous Si−The superior photoluminescent Si

To improve the stability of porous Si (PS) prepared by electrochemical etching, we make use of rapid‐thermal oxidation (RTO). During RTO processing, the hydride coverage of the internal surfaces of the pores is replaced by a high‐quality oxide while retaining nm‐sized Si grains. With increasing process temperature Tox the luminescence is first quenched. It is recovered with comparable intensity for Tox≥700 °C.