MOS Compact Modelling for Flexible Electronics

Circuit design in flexible electronics should account for shifts in metal-oxide semiconductor (MOS) characteristics with the mechanical strain induced by substrate bending. Apart from the standard process and layout strain sources, externally applied strain in flexible electronics varies with bending direction and radius. The physical compact models for the strain effects on semiconductor band structure and carrier mobility due to substrate bending are derived in this chapter from basic deformation potential theory. It is demonstrated how existing MOS compact models could be extended for bending-induced strain effect by modification of the set of material model parameters controlling the semiconductor band structure and carrier mobility.