Influence of process parameters on the time‐dependent dielectric breakdown of rapid thermally nitrided and reoxidized nitrided thin SiO2

We report the impact of rapid thermal nitridation (RTN) and subsequent reoxidation (RTO) on the time‐dependent dielectric breakdown of thin‐gate oxides. The effect of RTN and RTO conditions on intrinsic and defect‐related dielectric breakdown is investigated. These breakdown characteristics are correlated with compositional changes in the oxide during RTN and RTO. An optimal RTN/RTO gate oxide with higher charge‐to‐breakdown and lower defect density than pure SiO2 is reported.