Detection of Si doping in the AlN/GaN MQW using Super X – EDS measurements
2020
A multiple-quantum-well structure consisting of 40 periods of AlN/GaN:Si was investigated using a transmission electron microscope equipped with energy-dispersive X-ray spectroscopy. The thicknesses of the AlN barriers and the GaN quantum wells were 4 nm and 6 nm, respectively. The QW layers were doped with Si to a concentration of 1.3x10(19)cm(-3) (0.012 % at). The procedure for quantifying such a doping level using AlN as a standard is presented. The EDS results (0.013 % at) are compared with secondary ion mass spectrometry measurements (0.05 % at).
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
26
References
1
Citations
NaN
KQI