Tuning conductance in C60 devices: defective C60 and endohedral C60 complex

The transport properties and I–V characteristics of C60, defective C60, endohedral C59 complex, and endohedral C60 complex devices have been investigated. The transmission coefficients of the C60 devices have been found to be largely affected by either defect or doping an atom in the center of the C60. The conductance in C60 devices can also be tuned by both defect and doping. In particular, doping an atom into the center of C60 has an obvious effect on tuning conductance. C@C60, N@C60, and O@C60 double the current of the C60 device, while B@C60 terminates the current at low voltage.