Annealing Behavior of Zn-Doped p-Type InSe

Photoluminescence measurements were carried out to study the annealing effect of Zn-doped p-type InSe. The diffusion constant of Zn atom along the c-axis in InSe was estimated to be D=2.7×107 exp (-2.5 eV/kT)cm2s-1 from the depth profiles of the 1.17 eV emission peak intensity. The isochronal annealing behavior of this peak showed that the activation energy for a dissociation of Se vacancy-Zn acceptor complex was 0.4 eV.