Modeling and optimization of core (p-GaN)-multishell (i-InxGa1-xN/i-GaN/n-Al0.1Ga0.9N /n-GaN) nanowire for photovoltaic applications

Abstract In this work we report a modeling and optimization of a novel core (p-GaN)-multishell (i-In x Ga 1-x N/i-GaN/n-Al 0.1 Ga 0.9 N/n-GaN) coaxial NWs with a total length of about 3 μm and a radius of 0.19 μm. The variation of Indium composition in the i-In x Ga 1-x N active layer shows that x = 15% is the optimal composition that gives a good short circuit current and efficiency of about 2.24 mA/cm 2 and 2.93%, respectively. Beyond x = 35% the structure starts to present deteriorations. Moreover, the optimal x composition founded provides a gain of about 12.9% of EQE in the mid-infrared part. The study of the variation of the total current density along the nanowire demonstrates that the maximum of this latter is located in AlGaN cladding shell layer and at the interfaces between the i-region and AlGaN cladding shell layer. In other hand, our results show that our structure presents an optimal efficiency of about 3.5% at a temperature of 275 K with the same AM1.5G solar spectrum.