Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells

We have studied the effect of the surface treatment of the CdS/CdSe quantum dots QDs by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells QDSSCs based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F− ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm2 to 14 mA/cm2.