interface deposited using atomic layer deposition ALD for deep submicron device applications

Electrical and reliability characteristics of several SirAl O barrier layer rSi capacitor structures have been investigated. 23 . Al O film was deposited by atomic layer deposition ALD . ALD Al O was found to be a good chemical oxide barrier layer 23 23 which is important for achieving thin oxide thickness. Formation of a metallic Al cluster was observed at the Al O rn q -doped Si 23 interface layer. SiO formed by O flushing at 4008C for 10 min was found to be very effective to prevent the formation of a 22 metallic Al cluster and to reduce the leakage current to less than 1 = 10 y15 Armm 2 at an applied voltage of 2.0 V. In situ stress)temperature measurement of Al O rSiO rn q -doped poly Si was carried out to evaluate the residual stain of the film. 23 2 .