Low temp polycrystal silicone film transistor display panel and manufacturing method thereof

2005 
A display panel comprising a substrate; a polysilicon layer, formed on the substrate, and a polycrystalline silicon layer crystallized using a solid phase crystallization method from; a silicon oxynitride (SiON) layer formed on the polysilicon layer, and a silicon oxynitride refractive index layer is from about 1.46 to 1.9; and a gate electrode (gate electrode), is formed on the silicon oxynitride layer.
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    0
    References
    0
    Citations
    NaN
    KQI
    []