Organic n-type field-effect transistor

Abstract We have used tetracyanoquinodimethane (TCNQ) as the active semiconducting material in metal-insulator-semiconductor field-effect transistors (MISFETs). TCNQ behaves as an n-type semiconductor. Differential capacitance measurements on metal-insulator-semiconductor (MIS) devices confirm the n-type behaviour. A maximum field-effect mobility of 3 × 10 −5 cm 2 V −1 s −1 is observed. On exposure to air the on/off ratio of the FETs improves to in excess of 450, due to oxidative dedoping of the TCNQ and narrowing of the channel.