Optical Properties of InGaN/GaN Multiple Quantum Wells

We have used steady-state and time-resolved photoluminescence to investigate optical properties of In0:13Ga0:87N/GaN multiple quantum wells (MQW) grown by using metalorganic chemical vapor deposition. The quantum well spectra were explained in terms of the radiative recombination of excitons in the localized states. Exciton formation of the InGaN MQW might be delayed for excitations above the GaN barrier excitation compared with exciton formation in excitations below the GaN barrier. The critical temperature at which nonradiative recombination dominantly occurred was increased under the excitation below the GaN barrier because screening caused by carriers in the GaN barrier vanished.