Comparison of currentline pore growth in n‐type InP and in n‐type Si

In this work the growth of currentline-oriented pores in (100) n-type InP and in (100) n-type Si for different doping concentrations has been studied. The pore morphology of both pore types is very similar, as is the characteristic behavior of the etching current. These similarities strongly indicate, that the underlying growth mechanisms of these pores in InP and Si are the same. A model for the currentline pores in both semiconductors is introduced, focusing on the strong diffusion limitation of species (reactants or products) at the pore tips. (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)