New measurement technique for the product of the electron mobility and mean free drift time for pixelated semiconductor detectors

Abstract A new method for measuring the electron mobility, the electron mean free drift time, and their product has been developed for pixelated semiconductor detectors. Using data from a standard calibration measurement, these three quantities are measured and compared against results using other methods. Since the results can be easily obtained, comparisons of many detectors have been completed and show that detector spectroscopic performance is independent of the electron trapping if the raw electron trapping is less than 6.5% from the cathode to the anode surface.