Improvement of the Thermal Stability of NiSi by Germanium Ion Implantation

bAdvanced Ion Beam Technology Company, Hsinchu 300 Taiwan The thermal stability of nickel monosilicide NiSi is one of the important research topics in the area of nano-complementary metal oxide semiconductor. This paper reports the effect of germanium Ge ion implantation on the thermal stability of the NiSi/Si structure. High dose Ge ion implantation 5 10 15 cm �2