Preparation of Cr–Si–N–O thin films epitaxially grown on MgO substrates by pulsed laser deposition

Abstract Cr–Si–N–O thin films were epitaxially grown on MgO substrates by pulsed laser deposition. The composition of these films was analyzed by Rutherford backscattering spectroscopy. X-ray diffraction analysis revealed them to be single-crystal-like (Cr,Si) (N,O) thin films. In addition, the diffraction of B1 and D51 observed in the selected area electron diffraction patterns indicated the presence of stacking faults. Therefore, it was concluded that the (Cr,Si) (N,O) thin films exhibited solid-solution hardening due to the addition of Si, and stacking faults induced by the addition of oxygen. Measurements by the nanoindentation method determined that the hardness of the Cr–Si–N–O thin films was about 35 GPa. The hardness did not vary with oxygen content.