In-situ delineation of defects in ISOVPE-grown Hg1−xCdxTe layers

Abstract Well-defined, triangular features conforming to the crystallographic orientation have been observed on the (111)Cd surface of the as-grown epilayer of Hg 1− x Cd x Te grown by isothermal vapour phase epitaxial method. It is found to be the result of preferential condensation of Te at defect sites during controlled terminal cooling of the growth tube.