RADIATION HARDNESS OF SILICON DETECTORS MANUFACTURED ON WAFERS FROM VARIOUS SOURCES

Abstract Impurity concentrations in the initial silicon material are expected to play an important role for the radiation hardness of silicon detectors, during their irradiation and for their evolution with time after irradiation. This work reports on the experimental results obtained with detectors manufactured using various float-zone (FZ) and epitaxial-grown material. Preliminary results comparing the changes in leakage current and full depletion voltage of FZ and epitaxial detectors as a function of fluence and of time after 10 14 cm −2 proton irradiation are given. The measurement of charge collection efficiency for epitaxial detectors is also presented.