Structural and electronic analysis of Hf on Si(1 1 1) surface studied by XPS, LEED and XPD

Abstract In this work, we present a systematic electronic and structural study of the Hf-silicide formation upon annealing on Si(1 1 1) surface. The electronic structure and surface composition were determined by X-ray photoelectron spectroscopy (XPS) and angle-resolved X-ray photoelectron spectroscopy (ARXPS). To determine the atomic structure of the surface alloy we used low energy electron diffraction (LEED) and angle-resolved photoelectron diffraction (XPD). It was possible to verify that, after 600 °C annealing, there is alloy formation and after 700 °C the Hf diffusion process is predominant. Using LEED and XPD measurements we detected the ordered island formation simultaneously with alloy formation.