RTN in GexSe1-x OTS selector devices

Abstract Random telegraph noise (RTN) signals in Ge x Se 1-x ovonic threshold switching (OTS) selector have been analysed in this work, both before and after the first-fire (FF) operation and at on- and off-states. It is observed that RTN appears after the FF, and its absolute amplitude at the off-state is small and negligible in comparison with the RTN signals in RRAM devices. At the on-state, large RTN signals are observed, which can either partially or fully block the conduction path, supporting that a conductive filament is formed or activated by FF and then modulated during switching. Statistical analysis reveals that the relative RTN amplitude at on-state in Ge x Se 1-x OTS selector is smaller than or equivalent to those in RRAM devices.