Characterization of Fogging and Develop-Loading Effects in Electron-Beam Direct-Writing Technology

We investigated long-range critical dimension (CD) error factors, such as fogging and develop loading, to improve CD uniformity in electron-beam direct-writing (EBDW) technology. It was found that the impact of both effects reached 20 mm and the CD of the monitor pattern decreased by no less than 10%. Fogging and develop loading were separated by comparing the newly designed test patterns that were exposed using both EB and a krypton-fluoride excimer laser. We confirmed that the impact of fogging and develop loading by arranging dummy patterns with a density of 40% was estimated to be +8.9 and -18.9% in the CD, respectively. Based on success in separating each effect, fogging and develop loading were decreased by applying an antistatic agent and multipuddle development, respectively.