Fabrication of silicon-on-insulator structure with Si3N4 as buried insulating films by epitaxial layer transfer

Abstract One of the main disadvantages of standard silicon-on-insulator (SOI) materials is that the buried oxide layer has poor thermal conductivity and so self-heating effects can be a problem. In order to minimize the above effects, the single-crystalline Si/Si 3 N 4 /substrate-Si structures were successfully formed using electron beam evaporation of silicon on porous silicon and epitaxial layer transfer for the first time. The SOI structures were investigated by high-resolution cross-sectional transmission electron microscopy and spreading resistance profile. Experimental results show that the buried Si 3 N 4 layer has an amorphous structure and the new SOI sample has good structural and electrical properties.