Industry relevant RIE texturing for mc-Si diamond wire or Direct Wafer® product: optimized reflectivity, uniformity, and throughput

Low-cost wafering processes such as diamond wire sawn and Direct Wafer® technology are excellent candidates for emerging texturing techniques. Reactive Ion Etch enables enhanced light-trapping with respect to traditional acid texturing techniques. Simulations predict that narrow pyramids have the lowest reflectance. The experiments in an industrial RIE machine demonstrate that the lowest reflectance etch is not necessarily the most uniform or the fastest etch. Fast-forming texture with low reflectivity and high uniformity were obtained using a ratio of Cl 2 to SF 6 between 0.35 and 0.65, a ratio of O 2 to SF6 between 1.2 and 1.7, power of 18-22 kW, and pressure of 19-25 Pa.