Optical studies of MOVPE-grown GaN layers

Photoluminescence and reflectance studies of MOVPE grown GaN samples were performed. From reflectance measurements optical constants were calculated by means of Kramers-Kronig analysis in the energy region 0 divided by 6 eV.© (1999) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.