Study of the AC Characteristics of Millimeter-Wave AlGaN / GaN HEMT

The millimeter-wave band has become a developing trend in the study of AlGaN/GaN HEMT.The AC characteristics of AlGaN/GaN are researched by using TCAD software for device simulation.The effects of Al composite and thickness of barrier layer on frequency characteristics are analyzed.The frequency characteristics of device are simulated based on intrinsic S parameters of AlGaN/GaN HEMT from TCAD software and extrinsic parameters of device from ADS software.Layout design and fabrication of the devices are finished based on devices simulation,and then the frequency characteristics of the device are measured.The comparison between measured results and simulated results shows that both of results are close.It means that device simulations are of guiding significance and also valid.